ZnO growth by MOCVD: numerical study

EnIII−V compound device fabrication is facing today challenging issues typically related to high volume manufacturing such as process reliability, process consistency, cost−reduction. Each step of the overall device manufacturing process must be carefully analysed and replicated to obtain reproducible device structures. Purifiers are commonly used in MOVPE processes and are becoming standard equipment in both research and production environments. In most cases implementation of gas purification strategies is enabling to achieve ultimate product purity and process reproducibility by defect and contamination control. In addition, an appropriate gas purification strategy is effective in high value component/chemicals protection (e.g. high purity MO sources), and as an assurance against line contamination due to human error or component failure. Purifier operating conditions can vary noticeably and a knowledge of which parameters can affect ultimate gas purity should be of interest to MOVPE operators to master gas distribution line contamination issues. Expertise on such parameters and their effect is essential to obtain a reliable product and sub−ppb contamination control throughout the purifier's lifetime and not only in spot demonstrations

Anomalous Raman Modes in Tellurides

Two broad bands are usually found in the Raman spectrum of many Te-based chalcogenides, which include binary compounds, like ZnTe, CdTe, HgTe, GaTe, GeTe, SnTe, PbTe, GeTe2, As2Te3, Sb2Te3, Bi2Te3, NiTe2, IrTe2, TiTe2, as well as ternary compounds, like GaGeTe, SnSb2Te4, SnBi2Te4, and GeSb2Te5. Many different explanations have been proposed in the literature for the origin of these two anomalous broad bands in tellurides, usually located between 119 and 145 cm-1. They have been attributed to the own sample, to oxidation, to the folding of Brillouin-edge modes onto the zone center, to the existence of a double resonance, like that of graphene, or to the formation of Te precipitates. In this paper, we provide arguments to demonstrate that such bands correspond to clusters or precipitates of trigonal Te in form of nanosize or microsize grains or layers that are segregated either inside or at the surface of the samples. Several mechanisms for Te segregation are discussed and sample heating caused by excessive laser power during Raman scattering measurements is emphasized. Finally, we show that anomalous Raman modes related to Se precipitates also occur in selenides, thus providing a general vision for a better characterization of selenides and tellurides by means of Raman scattering measurements and for a better understanding of chalcogenides in general.Comment: 45 pages, 8 figure

Bandgap and effective mass of epitaxial cadmium oxide

The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16±0.02 eV and 0.21±0.01m0 respectively

Strong optical nonlinearities in gallium and indium selenides related to inter-valence-band transitions induced by light pulses

A nonlinear optical effect is shown to occur in gallium and indium selenides at photon energies of the order of 1.5 eV. It corresponds to transitions from a lower-energy valence band to the uppermost one when a nonequilibrium degenerate hole gas is created in the latter by a laser pulse. This inter-valence-band transition is allowed by crystal symmetry. Its oscillator strength is estimated through the f-sum rule and turns out to be about two orders of magnitude higher than that of the fundamental transition. The intensity of this effect is stronger when the pump pulse photon energy is close to that of the inter-valence-band transition; a condition that can be fulfilled only in indium selenide. The transient behavior of the sample transmittance is shown to be controlled by the balance between absorption and stimulated emission, which depends on the hole quasi-Fermi level and the gap renormalization due to Coulomb interaction in the electron-hole gas generated by the pump

Investigation of nitrogen-related acceptor centers in indium selenide by means of photoluminescence: Determination of the hole effective mass

In this work we report on steady-state and time-resolved photoluminescence (PL) measurements in nitrogen doped p-type indium selenide in the 33-210-K temperature range. In samples with low nitrogen concentration the photoluminescence spectrum consists of exciton-related peaks and a band-to-acceptor recombination peak (2.1-μs lifetime) with LO-phonon replica. An ionization energy of 65.5 meV is proposed for the nitrogenrelated acceptor. A long-lived (18 μs) component, which consists of an asymmetric broadband centered around the acceptor peak, has been also detected by means of time-resolved PL. Samples with a higher nitrogen concentration show a PL spectrum that mainly consists of the asymmetric long-lived broadband that can be associated to a complex center. The asymmetric shape of this band is quantitatively accounted for in the framework of the configuration coordinate model for complex centers. Under the assumption that the nitrogen related acceptor is shallow, the Gerlach-Pollman theory allows an estimate of the hole's effective masses

Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure

[EN] This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi2Se3) up to 9 GPa. The optical gap of Bi2Se3 increases from 0.17 eV at ambient pressure to 0.45 eV at 8 GPa. The quenching of the Burstein-Moss effect in degenerate samples and the shift of the free-carrier plasma frequency to lower energies reveal a quick decrease of the bulk three-dimensional (3D) electron concentration under pressure. On increasing pressure the behavior of Hall electron concentration and mobility depends on the sample thickness, consistently with a gradual transition from mainly 3D transport at ambient pressure to mainly two-dimensional (2D) transport at high pressure. Two-carrier transport equations confirm the trapping of high-mobility 3D electrons, an effect that can be related to a shallow-to-deep transformation of donor levels, associated with a change in the ordering of the conduction band minima. The high apparent areal density and low electron mobility of 2D electrons are not compatible with their expected properties in a Dirac cone. Measured transport parameters at high pressure are most probably affected by the presence of holes, either in an accumulation surface layer or as minority carriers in the bulk. ©2012 American Physical SocietyThis work has been done under financial support from Spanish MICINN under Grants No. MAT2008-06873-C02-02, No. MAT2007-66129, No. MAT2010-21270-C04-03/04, No. CSD2007-00045, and Prometeo No. GV2011/035. The supercomputer time has been provided by the Red Espanola de Supercomputacion (RES) and the MALTA cluster.Segura, A.; Panchal, V.; Sánchez-Royo, JF.; Marín-Borrás, V.; Muñoz-Sanjosé, V.; Rodríguez-Hernández, P.; Muñoz, A.... (2012). Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure. 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Correlative study of structural and optical properties of ZnSe under severe plastic deformation

The effect of plastic deformation on the optical and structural properties of ZnSe crystals has been investigated. The optical properties have been monitored by cathodoluminescence measurements as a function of the deformation degree. Remarkable differences in the defect-related emissions from the most severely deformed areas have been encountered. Deformation of the crystal lattice of ZnSe, associated with slip phenomena, has been studied by means of Electron Backscattered Diffraction and micro-Raman spectroscopy. The relation between the deformation and the optical properties of the ZnSe crystals has been described